个人简历
现为南京大学教授，博士生导师。 1992,9-1996,7 南京大学物理系，半导体专业本科学生；
1996,9-2001,7 南京大学物理系，微电子专业，获理学博士学位；
2001,9-2004,9 香港科技大学电机与电子工程系，副研究员；
2004,9-2013,2 香港微晶先进光电技术有限公司，创始人之一，历任高级工程师，研发部经理，研发总监；
2013,2-至今 南京大学电子科学与工程学院，教授。
研究生期间，在国内率先利用光加热低压金属有机化学气象沉积生长了高质量的GaN和AlGaN，在国际上首次提出用肖特基C-V特性模拟法准确测算极化电荷密度。2001年9月到2004年9月，在香港科技大学工作期间，在国际上率先提出并实现了复合沟道结构的GaN基 高电子迁移率晶体管（HEMT）；生长制备出性能达到同期国际先进水平的GaN-LED和HEMT器件。2004年9月到2013年2月参与香港微晶先进光电科技有限公司和其子公司晶科电子的创建和发展工作期间取得了一系列富有创新性的科技成果：成功开发出倒装焊大功率LED，亮度可靠性指标达到国际领先水平；在国际上首次成功开发出集成驱动电路的芯片级光源；成功开发出倒装焊HV-LED器件，获得“2010国家半导体照明创新大赛”产品创新大奖；成功开发出晶片级无金线陶瓷基板大功率封装光源及其模组制造技术等等。他的研究成果已在产业界应用，产生了效益，并在国内外产业界产生了较大的影响。共发表SCI收录论文50多篇，获得专利10多项。
研究方向
GaN基半导体材料与器件，LED器件工艺与先进封装，光电器件及系统的可靠性分析与寿命预测
主要课程
课程“微电子封装技术”出版教材：周玉刚，张荣. 微电子封装技术[M]. 北京：清华大学出版社，2023
课程获奖：江苏省产教融合一流课程（2022立项）教材获奖：
“十三五”江苏省高等学校重点教材 (2021-2-176），2021立项，2022年审定2026年江苏普通高等教育本科省级规划教材
代表成果
Design and Realization of GaN-Based Trench-Gate MOSFETs Based on Graded Al-Composition AlGaN Channel Layer. Guo, Y.,Liu, Z.,Wang, G.,Guo, H.,Zhou, Y.*,Chen, D.,Zhang, R.,Zheng, Y., IEEE Transactions on Electron Devices, accepted. 2026. https://doi.org/10.1109/TED.2026.3697706 High-Efficiency Deep Ultraviolet Light-Emitting Diode Based on Ag-Nanodot/Pd/Al Composite Electrode. Huang, L.,Cheng, F.,Li, L.,Zhou, Y.*,Zhang, R.,Zheng, Y., IEEE Transactions on Electron Devices, Early Acess. 2026. https://doi.org/10.1109/ted.2026.3684764 3-D Stacked Full-Color μLED Displays with Monolithic Integrated Bismuth Ferrite-Based Color Filter. Chen, L.,Guo, Y.*,Huang, L.,Li, L.,Zhang, J.,Zhou, Y.*,Ren, F.,Lu, H.,Liu, B.,Zhang, R.,Zheng, Y., IEEE Electron Device Letters 47 (6), 1157-1160.2026. https://doi.org/10.1109/led.2026.3684510. (封面论文) In Situ Junction Temperature Measurement and Thermal Resistance Extraction of AlGaN/GaN HEMTs Using Schottky Diode-Integrated Sensor. Wang, P.,Tang, F.,Wang, R.,Guo, H.,Peng, Y.,Guo, H.,Zhou, Y.*,Chen, D.,Zhang, R.,Zheng, Y., IEEE Electron Device Letters 47 (4), 804-807.2026. https://doi.org/10.1109/led.2026.3665725. Micro-LED Microdisplays Driven by Carbon Nanotube Active-Matrix Backplanes. Li, Y.,Guo, Y.,Li, J.,Xi, M.,Bai, L.,Zhang, J.,Li, S.,Zhu, X.,He, Y.,He, B.,Chen, X.,Zhang, Y.,Gong, Y.,Yin, Z.,Kang, J.,Peng, L.-M.,Zhang, R.,Zhou, Y.*,Cao, Y.*,Liang, X.*, ACS Nano 19 (25), 22837-22848.2025.https://doi.org/10.1021/acsnano.5c00672. Temperature-Dependent Carrier Dynamics in Micro-LEDs With Different Sidewall Passivation Layers. Wang, H.,Yin, J.,Hong Zhang, J.,Zhou, Y.*,Tao, T.,Zhou Liu, Y.,Feng Pan, D.,Liu, B.,Zhang, R.,Zheng, Y., IEEE Transactions on Electron Devices 72 (7), 3699-3706.2025. https://doi.org/10.1109/TED.2025.3574121 Significant Enhancement of Light Extraction in AlGaN-Based Deep-UV LED Through Ag-Nanodot/Ti/Al Reflective p-Contacts With an Ultra-Thin Ti Barrier. Cheng, F.,Pan, S.,Wang, H.,Guo, Y.,Jin, H.,Ren, F.,Zhou, Y.*,Lu, H.,Zhang, R.,Zheng, Y., IEEE Transactions on Electron Devices 72 (5), 2438-2443.2025. https://doi.org/10.1109/TED.2025.3556098 Quantitative Evaluation of Carrier Dynamics in Blue Micro-LEDs: The Impact of Size and Current Density on Recombination and Injection Efficiency. Wang, H.,Jia, X. T.,Guo, Y.,Liu, Z. X.,Zhou, Y. G.*,Tao, T.,Liu, B.,Zhang, R.,Zheng, Y. D., Acs Applied Electronic Materials 6 (11), 8134-8142.2024.https://doi.org/10.1021/acsaelm.4c01464. Monolithic full-color micro-LED displays featuring three-dimensional chip bonding and quantum dot-based color conversion layer. Guo, Y.,Yu, J. C.,Huang, L.,Liu, Z. X.,Gai, Z. H.,Zhi, T.,Zhou, Y. G.*,Tao, T.,Liu, B.,Zhang, R.,Zheng, Y. D., Optics Express 32 (16), 27662-27669.2024. https://doi.org/10.1364/Oe.530687. Ag nanodot/Mg/Al reflective Ohmic contacts simultaneously suitable for n-type and p-type GaN. Jin, N.,Zhou, Y.*,Guo, Y.,Pan, S.,Zhang, R.,Zheng, Y., Journal of Physics D: Applied Physics 56 (21), 215101.2023.https://doi.org/10.1088/1361-6463/acc598.
(Pan S, Chen KL, Guo Y, Liu ZX, Zhou YG*, Zhang R, Zheng YD )
Optimization of annealing conditions for Ag/p–GaN ohmic contacts. Applied Physics A127 (11).2021. （Pan S, Lu YM, Liang ZB, Xu CJ, Pan DF, Zhou YG*, Zhang R, and Zheng YD）
High-Reflectivity Mg/Al Ohmic Contacts on n-GaN,IEEE Photonics Technology Letters, Vol.33, pp.347-349, Apr. 2021. doi:10.1109/lpt.2021.3063266 （Guo Y, Pan S, Pan DF, Xu CJ, Zhou YG,* Zhang T, and Zheng YD）
Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K, Applied Sciences, vol. 10, p. 444, 2020. （Pan S, Sun CH, Zhou YG*, Chen W, Zhang R, and Zheng YD）
A simulation study on the enhancement of the efficiency of GaN-based blue light-emitting diodes at low current density for micro-LED applications, Materials Research Express, vol. 6, p. 105915, 2019. （Jia XT, Zhou YG*, Liu B, Lu H, Xie ZL, Zhang R, and Zheng YD）
The Effect of the Original Thickness of Ag in the Graphene-Ag Nanodots Transparent Conductive Layer on the Electrical and Optical Properties of GaN-Based UV-LEDs, IEEE Transactions on Electron Devices, pp. 1-6, 2018.
（Chen W, Zhou YG*, Yu XZ, Xie ZL, Zhang R, and Zheng YD）
Study of LED Thermal Resistance and TIM Evaluation Using LEDs With Built-in Sensor, IEEE Photonics Technology Letters, vol. 29, pp. 1856-1859, Nov 1 2017.
（Wang XL, Zhou YG*, Tian RB, Liu B, Xie ZL, Zhang R, Zheng YD）
In-Situ Measurement of Junction Temperature and Light Intensity of Light Emitting Diodes With an Internal Sensor Unit,IEEE ELECTRON DEVICE LETTERS, vol. 36, pp. 1082-1084, Oct. 2015
(Li JM, Zhou YG*, Qi YD, Miao ZL, Wang YM, Xiu XQ, Liu B, Zhang R, and Zheng YD)
Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth, PHYSICA STATUS SOLIDI C, Vol 2, No 7, pp.2663-2667, 2005
(Zhou YG, Chu RM, Liu J, Chen KJ, Lau KM)
Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition,JOURNAL OF ELECTRONIC MATERIALS，Vol. 34, No. 1, pp. 112-118, JAN 2005
（Zhou YG, Wang DL, Chu WM, Tang CW, Qi YD, Lu ZD, Chen KJ, Lau KM）
Investigation of the polarization-induced charges in modulation-doped AlxGa1-xN/GaN heterostructures through capacitance-voltage profiling and simulation,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1， Vol. 41, No. 4B, pp. 2531-2535, APR 2002
（Zhou YG, Shen B, Someya T, Yu HQ, Liu J, Zhou HM, Zhang R, Shi Y, Zheng YD, Arakawa Y）
Gas phase parasitic reactions and Al incorporation efficiency in light radiation heating, low-pressure metal-organic chemical vapor deposition of AlGaN,MATERIALS LETTERS, vol. 45, no.6, pp 331-335, Oct 2000
(Zhou YG, Zhang R, Li WP, Shen B, Chen P, Chen ZZ, Gu SL, Shi Y, Zheng YD and Huang ZC)
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment,IEEE ELECTRON DEVICE LETTERS, Vol. 26, No. 7, pp. 435-437, Jul 2005
(Cai Y, Zhou YG, Chen KJ, Lau KM)
近期授权发明专利： CN202110521392.6，具有同材质高反射p、n欧姆接触的倒装LED芯片及制法，周玉刚、郭焱、金楠、梁志斌、潘赛、许朝军、张荣 CN202110275172.X，包含高反射 n-GaN 欧姆接触的倒装 LED 芯片及其制作方法，周玉刚、郭焱、许朝军、潘赛、张荣 CN202010362919.0，高发光效率的深紫外发光二极管芯片及其制作方法，周玉刚、陆佑铭、许朝军、王安生、张荣 CN202110034154.2，流体组装的微米级器件模组及其制造方法，周玉刚、贾先韬、许朝军、张荣
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CN201410004973.2, 一种集成传感单元的LED器件及其制造方法, 周玉刚、张荣
CN201510012923.3, 一种改善电流扩展的半导体器件, 周玉刚、修向前、谢自力、陈鹏、刘斌、张荣
CN201510219302.2, 紫外半导体发光器件及其制造方法,周玉刚、余显正、张荣
CN201510308515.2, 一种集成石墨烯温度传感的LED器件及其制造方法, 周玉刚、李家明、张荣
CN201010190052.1, 一种使用交流电的发光器件及其制造方法, 周玉刚等；【PCT申请, 美国，欧盟，日本专利号如下：WO2011147063A1 - US2011285284A1 - EP2390918A2 - JP2011249755A】
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