周峰，南京大学电子学院副教授（特聘研究员），博士生导师，国家级青年人才，从事第三代宽禁带半导体技术研究，主持/参与国家科技重大专项、国家重点研发计划、国家自然科学基金、江苏省重点研发计划课题等项目，发表论文50余篇，授权/申请专利40余项，获得国家/省部级等奖项，入选国家青年人才、中国科协青年人才托举工程、江苏省青托、江苏省科技副总等计划。

宽禁带半导体材料、器件与电路应用

近三年主要成果整理：

[1]  J. F. Qian et al., “Trap-induced degradation mechanisms in quasi-vertical GaN PiN diodes under the combined effects of high-energy heavy ion irradiation and off-state reverse bias,” Appl. Phys. Lett., vol. 128, no. 1, p. 012101, 2026.

[2]  W. Wang et al., “High-energy krypton-ion irradiation-induced stress and strain in AlGaN/GaN heterojunctions and latent tracks in devices,” Semicond. Sci. Technol., vol. 41, no. 5, 2026.

[3]  F. Zhou et al., “Highly Robust p-GaN Gate HEMT with Surge-Energy Ruggedness under Unclamped Inductive Switching and UV Pulse Laser Irradiation,” IEEE Electron Device Lett., vol. 46, no. 1, pp. 36-39, Jan. 2025.

[4]  F. Zhou et al., “Enhanced Irradiation Capability in AlGaN/GaN p-GaN-Hybrid Anode Power Diodes via Structural Hardening Design,” in 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 213-216, 2025.

[5]  Z. Zhang et al., “Catastrophic burnout mechanisms of NiO/β-Ga2O3 heterojunction diodes irradiated by 1.35 GeV high-energy heavy ions,” Applied Physics Letters, vol. 127, no. 12, p. 122105 2025.

[6]  M. Zhang et al., “Dynamic Overvoltage and Energy Loss in p-GaN HEMTs Under Ultraviolet Pulsed Laser-Induced Single Event Irradiation,” in Proc. IEEE Int. Symp. Power Semicond. Devices IC’s, pp. 285-288, 2025.

[7]  W. Wang et al., “Suppression of Dynamic Resistance Degradation in 1200-V GaN-on-Sapphire E-Mode GaN HEMTs by Drain-Side Thin p-GaN Design,” IEEE Trans. Electron Devices, vol. 72, no. 3, pp. 1537-1540, Jan. 2025.

[8]  N. Sun et al., “1.4 kV Irradiation-Hardened β-Ga₂O₃ Heterojunction Barrier Schottky diode under 10⁷ ions/cm² Fluence and 82.1 MeV∙cm²/mg LET Environments,” IEEE Electron Device Lett., vol. 86, no. 5, pp. 813-816, May 2025.

[9]  Y. Rong et al., “X-Ray Irradiation-Induced V_TH Instability in Schottky-Gate p-GaN HEMTs,” IEEE Trans. on Electron Devices, vol. 72, no. 4, pp. 1689-1694, Feb. 2025.

[10]  J. Qian et al., “Heavy Ion Irradiation-Induced Electrical Degradation and Leakage Mechanism in Quasi-Vertical GaN PiN Diodes,” in 2025 6th International Conference on Radiation Effects of Electronic Devices (ICREED), pp. 1-4, 2025.

[11]  T. Zhou et al., “Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness,” in Proc. Int. Symp. Power Semiconductor Devices IC’s, pp. 526-529, Jun., 2024.

[12]  F. Zhou et al., “Irradiation Hardened p-GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV·cm²/mg and 95% Conversion Efficiency at 300 W/500 kHz,” IEEE Electron Device Lett., vol. 45, no. 6, pp. 976-979, Jun. 2024.

[13]  F. Zhou et al., “800-V Irradiation-Hardened Device Technology on GaN-on-SiC Power Integration Platform,” in Proc. IEEE Int. Electron Devices Meeting, pp. 1-4, Dec., 2024.

[14]  F. Zhou et al., “Investigation of Trap States and Reverse Leakage in Fully-Vertical GaN Schottky Barrier Diodes with Laser Lift-Off Substrate,” in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 311-314, 2024.