万昌锦，国家海外高层次青年人才（2020）。2016年毕业于中科院宁波材料所获博士学位，随后在新加坡南洋理工大学从事博士后研究工作，师从新加坡科学院/工程院院士、南洋理工校长首席教授Xiaodong Chen。先后获得包括中科院院长奖、中科院优秀毕业生、中科院优秀博士论文等荣誉，以及Springer Nature 出版社颁发的Springer Theses Prize（该奖项每年在全球范围内仅遴选100 篇左右）。并出版英文专著（ISBN 978-981-13-3313-2）一部，自2019年出版以来迄今下载超2200次，成为该类丛书符合联合国可持续发展目标的热门书籍之一，也成为亚马逊上晶体管电气工程类十大畅销书（排名第三）。

本人是IEEE Member，中国电子学会会员。多年来专注于神经形态器件及其类脑芯片这一交叉前沿研究领域，在该领域的理论研究和应用创新方面取得了一系列成果。迄今在相关领域发表SCI论文60多篇(其中超12篇单篇引用>100)，总引用次数超5900次，H-index 为39。担任International Journal of Extreme Manufacturing(IF=15.8)、Frontiers of Optoelectronics(IF=5.4)等杂志青年编委，是Adv. Funct. Mater.、IEEE Elctron Dev. Lett.、Appl. Phys. Lett.、Mater. Horiz.、Small等杂志审稿人。主持和参与国家自然科学基金面上项目、科技部重点研发、科技部重点研发青年科学家、中央高校基本科研业务费等项目。

个人网站

https://scholar.google.com/citations?user=pvULvhUAAAAJ&hl=en

1.新概念器件的神经形态计算及其工作机理研究

2.神经形态感知器件与系统构建

《信息存储与新型人工智能器件》

Papers in 2023

1. 1. M. Pei, Y. Zhu, S. Liu, H. Cui, Y. Li, Y. Yan, Y. Li*, C. Wan*, Q. Wan*. Power-Efficient Multisensory Reservoir Computing based on Zr-doped HfO2 Memcapacitive Synapse Arrays. Adv. Mater. 202305609 (2023)

   文章链接：https://doi.org/10.1002/adma.202305609

2. 2. X. Wang, C. Chen, L. Zhu, K. Shi, B. Peng, Y. Zhu, H. Mao, H. Long, S. Ke, C. Fu, Y Zhu, C Wan*, and Q. Wan*. Vertically integrated spiking cone photoreceptor arrays for color perception. Nat. Commun. 14, 3444 (2023)

   文章链接： https://doi.org/10.1038/s41467-023-39143-8

   南大新闻网报道：https://news.nju.edu.cn/xsdt/20230613/i113578.html

   公众号报道：https://mp.weixin.qq.com/s/Cg9TDBKXdVZw4E5zFJq6mQ

3. 3. Yifei Luo, ..., Changjin Wan, ... Technology Roadmap for Flexible Sensors. ACS Nano 2023, 17, 6, 5211–5295

   与全球140多位科学家联合撰写，全文链接：https://doi.org/10.1021/acsnano.2c12606

    被多个公众号报道：https://mp.weixin.qq.com/s/4e8T1fdnxfYRDFQ-jKDHaA

   https://mp.weixin.qq.com/s/YUMtM1Bj42vURla0lO9DVQ

   https://mp.weixin.qq.com/s/vr8TjxFeLXF-eP2IsQiL_A

   https://mp.weixin.qq.com/s/mEQGY8sKs9tk034fH_3s0A

   https://mp.weixin.qq.com/s/c0DRQ--B0IpgAZ8BqGa-DQ

4. 4. C. Fu, H. Cui, S. Ke, Y. Zhu, X. Wang, Y. Yang, C. Wan*, Q. Wan*. In2O3 Nanofiber Neuromorphic Transistors for Reservoir Computing. IEEE Electron Dev. Lett. 44, 1364-1367 (2023)

5. 5. H. Mao, Y. Zhu, S. Ke, Y. Zhu, K. Shi, X. Wang, C. Wan*, and Q. Wan*. A Tunable Leaky Integrate-and-Fire Neuron Based  on one  Neuromorphic Transistor and one Memristor. Appl. Phys. Lett. 123, 013501 (2023).

6. 6. H. Mao, Y. Zhu, Y. Zhu, B. Peng, C. Chen, L. Zhu, S. Ke, X. Wang, C. Wan*, and Q. Wan*. Amorphous indium–gallium–zinc oxide memristor arrays for parallel true random number generators. Appl. Phys. Lett. 122, 053503 (2023).
   

7. 7. Y. Yang, H. Cui, S. Ke, M. Pei, K. Shi, C. Wan*, and Qing Wan*. Reservoir computing based on electric-double-layer coupled InGaZnO artificial synapse. Appl. Phys. Lett. 122, 043508 (2023).

Selected papers in 2022

1.C. Chen, Y. He, H. Mao, L. Zhu, X. Wang, Y. Zhu, Y. Zhu, Y. Shi, C Wan*, and Q Wan*. A Photoelectric Spiking Neuron for Visual Depth Perception. Adv. Mater. 34, 2201895 (2022).

2.K. Shi, S. Heng, X. Wang, S. Liu, Ha. Cui, C. Chen, Y. Zhu, W. Xu, C. Wan* and Q. Wan*. An Oxide based Spiking Thermoreceptor for Low-power Thermography Edge Detection. IEEE Electron Dev. Lett. 43, 2196 (2022). 

3.Y. Zhu, B. Peng, L. Zhu, C. Chen, X. Wang, H. Mao, Y. Zhu, C. Fu, S. Ke, C. Wan*, and Q. Wan*. IGZO nanofiber photoelectric neuromorphic transistors with indium ratio tuned synaptic plasticity. Appl. Phys. Lett. 121, 133502 (2022).

4.Y. Zhu, H Mao, Y. Zhu, L. Zhu, C. Chen, X. Wang, S. Ke, C. Fu,C. Wan* and Q Wan*. Photoelectric Synapse Based on InGaZnO Nanofibers for High Precision Neuromorphic Computing. IEEE Electron Dev. Lett., 43, 651-654 (2022)

5.Y. Zhu, Y. He, C. Chen, L. Zhu, H. Mao, Y. Zhu, X. Wang, Y. Yang, C. Wan*, and Q. Wan*. HfZrOx-based Capacitive Synapses with Highly Linear and Symmetric Multilevel Characteristics for Neuromorphic Computing. Appl. Phys. Lett., 120, 113504 (2022).

Selected papers in 2021

1.H. Mao, Y. He, C. Chen, L. Zhu, Y. Zhu, Y. Zhu, S. Ke, X. Wang, C. Wan* and Q. Wan*. Adv. Electron. Mater. 8, 2100918 (2021).

2.L. Zhu, Y. He, C. Chen, X. Wang, Y. Zhu, Y. Zhu, H. Mao, C. Wan*, and Q. Wan*. IEEE T. on Electron Dev., 68, 6154-6158 (2021).

Selected papers before 2021

1.C. Wan, P. Cai, X. Guo, M. Wang, N. Matsuhisa, L. Yang, Z. Lv, Y. Luo, X. J. Loh, and X. Chen*. Nature Communications 11, 4602 (2020).

2.K. Xiao#, C. Wan#, L. Jiang, M. Antonietti, and X. Chen*. Advanced Materials, 32, 2000218 (2020).

3.C. Wan, P. Cai, M. Wang, Y. Qian, W. Huang*, and X. Chen*. Advanced Materials, 1902434 (2019).

4.Y. Zhou#, C. Wan #, Y. Yang, H. Yang, S. Wang, X. Chen*, and Y. Long*. Advanced Functional Materials, 29, 1806220 (2018).

5.C. Wan, G. Chen, Y. Fu, M. Wang, N. Matsuhisa, S. Pan, L. Pan, H. Yang, Q. Wan, L. Zhu*, and X. Chen*. Advanced Materials, 30, 1801291 (2018).

6.C. Wan, Y. Liu, P. Feng, W. Wang*, L. Zhu, Z. Liu, Y. Shi*, and Q. Wan*. Advanced Materials 28, 5878-5885 (2016).

7.C. Wan, L. Zhu, Y. Liu, P. Feng, Z. Liu, H. Cao, P. Xiao, Y. Shi*, and Q. Wan*.. Advanced Materials. 28, 3557–3563 (2016).

8.C. Wan, L. Zhu, Y. Liu, Y. Shi*, and Q. Wan*. IEEE Electron Device Letters 35, 672-674 (2014).

9.C. Wan, J. Zhou, Y. Shi*, and Q. Wan*. IEEE Electron Device Letters 35, 414-416 (2014).

10.L. Zhu, C. Wan, L. Guo, Y. Shi*, and Q. Wan*. Nature Communications, 5, 3158 (2014).