刘斌
微电子与光电子学系 教授、博导
刘斌微电子与光电子学系 教授、博导 |
个人简历
刘斌,本科毕业于中山大学理工学院,博士毕业于南京大学物理系微电子与固体电子学专业,其博士论文获得全国优秀博士论文提名奖,曾在英国谢菲尔德大学III-V族半导体国家研究中心、瑞典皇家工学院(KTH)、美国耶鲁大学,香港中文大学等访问研究,现任南京大学电子学院教授、博导,入选国家高层次人才计划、曾入选青长与优青,兼任教育部光电材料与芯片技术工程中心主任、南京大学国家级集成电路产教融合创新平台副主任,任科技部重点研发计划首席科学家,国家重大专项工程产品专家。主要研究领域为III族氮化物半导体材料与器件,Micro-LED新型显示技术,近年专注于氮化镓基Micro-LED材料生长、器件制备与机理研究,与华为、天马微电子等龙头企业合作开发高密度车载用Micro-LED芯片,量子点集成全色Micro-LED器件。主持国家重点研发专项项目与课题,国家自然科学基金委面上项目,江苏省前沿引领技术项目等12项,参加国家自然科学基金创新群体项目,科技部“973”、“863”计划等项目,成果发表于Nature Nanotechnology, Adv. Mater., Adv. Func. Mater.,IEEE EDL/T-ED/PTL等学术期刊,共计发表论文250余篇,申请/授权发明专利80余项,其中9项专利转让/许可,参编专著5部/章节;获国家教学成果二等奖1项,省部级科技成果奖3项。 研究方向
1.宽带隙半导体材料及异质结构;2.III族氮化物半导体光电子器件;3.半导体固态照明与Micro-LED显示技术;4.Si与III-V族电子与光电子集成技术 主要课程
本科生:《半导体物理与器件》、《半导体物理》、《科学之光》系列通识课程、《电子工程创新国际云科考课程》 代表成果
70.Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix. NATURE NANOTECHNOLOGY (2021). https://doi.org/10.1038/s41565-021-00966-5 (共同通讯作者) 69. High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD, PHOTONICS RESEARCH卷: 9 期: 9 文献号: 1683 出版年: 2021 (通讯作者) 68. Improved Optical Properties of Nonpolar AlGaN-Based Multiple Quantum Wells Emitting at 280 nm, IEEE PHOTONICS JOURNAL 卷: 13 期: 1 文献号: 2300107 1出版年: 2021 (通讯作者) 67. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays, LIGHT-SCIENCE & APPLICATIONS 卷:10 期:1 文献号:94 出版年: 2021 66. Plasma assisted molecular beam epitaxy growth mechanism of AlGaN epilayers and strain relaxation on AlN templates, JAPANESE JOURNAL OF APPLIED PHYSICS, 卷:60 期:7 文献号:075504 出版年: 2021 (通讯作者) 65. Investigations of Sidewall Passivation Technology on the Optical Performance for Smaller Size GaN-Based Micro-LEDs, CRYSTALS 卷:11 期:4 文献号: 403, 出版年: 2021 (通讯作者) 64. 3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure IEEE ELECTRON DEVICE LETTERS卷: 42期: 2页: 208-211出版年: 2021 63. 1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2 Bi-Layer Passivation at 2 GHz.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY卷: 9页: 160-164出版年: 2021 (通讯作者) 63. 2015-2020 62. Semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent/ APPLIED PHYSICS EXPRESS卷: 13期: 9 文献号: 091002 出版年: 2020 (通讯作者,Compound Semiconductor报道) 61.The optimization of surface plasmon coupling efficiency in InGaN/GaN nanowire based nanolasers/APPLIED PHYSICS EXPRESS 卷: 13 期: 8 文献号: 085001 出版年: 2020 (通讯作者,APEX Latest Spotlights) 60. Band Alignment and Interface Recombination in NiO/beta-Ga2O3 Type-II p-n Heterojunctions/IEEE TRANSACTIONS ON ELECTRON DEVICES 卷: 67 期: 8 页: 3341-3347 出版年: 2020 59. Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes based on III-Nitride Semiconductors/ADVANCED MATERIALS 卷: 32 期: 27 文献号: 1904354 出版年: 2020 (第一作者) 58. Epsilon-Ga2O3: A Promising Candidate for High-electron-Mobility Transistors/IEEE ELECTRON DEVICE LETTERS 卷: 41期: 7页: 1052-1055出版年: 2020 57.Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations/IEEE TRANSACTIONS ON ELECTRON DEVICES 卷: 67 期: 3 页: 841-846 出版年: 2020 (通讯作者) 56.High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes/IEEE PHOTONICS JOURNAL 卷: 12 期: 1 出版年: 2020 (通讯作者) 55. Plasmon-enhanced photoelectrochemical water splitting by InGaN/GaN nano-photoanodes/ SEMICONDUCTOR SCIENCE AND TECHNOLOGY 卷: 35 期: 2 文献号: 025017 出版年: 2020 (通讯作者) 54. The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates/ NANOTECHNOLOGY 卷: 31期: 4 文献号: 045604 出版年: 2020 (通讯作者) 53. Improvement of the interfaces in AlGaN/AlN superlattice grown by NH3 flow-rate modulation epitaxy/ APPLIED PHYSICS EXPRESS 卷: 13 期: 1 文献号: 015511 出版年: 2020 (通讯作者) 52. Improved Performance of Hybrid Organic/Inorganic p-n Heterojunction White Light-Emitting Diodes with 4,4 '-Cyclohexane-1,1-diylbis[N,N-bis(4-methylphenyl)aniline] as a Multifunctional Hole Transport Layer/PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 卷: 217 期: 7 特刊: SI 文献号: 1900763 出版年: 2020 (通讯作者,封面高亮论文) 51. Electron-Beam-Driven III-Nitride Plasmonic Nanolasers in the Deep-UV and Visible Region/SMALL 卷: 16 期: 1 文献号: 1906205 出版年: 2020 (通讯作者,封面高亮论文—Small十周年推荐论文) 50. Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy/PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 卷: 217 期: 7 特刊: SI 文献号: 1900729 出版年: 2020 (通讯作者,封面高亮论文) 49. Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate/CHINESE PHYSICS LETTERS 卷: 36 期: 8 文献号: 088501 出版年: 2019(通讯作者) 48. A High-Performance SiO2/SiNx 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors /IEEE PHOTONICS JOURNAL 卷: 11 期: 4 文献号: 2201007 出版年: 2019 47. Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes/ IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 31 期: 21 页: 1697-1700 出版年: 2019 (通讯作者) 46. Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction/IEEE PHOTONICS JOURNAL 卷: 11 期: 4 文献号: 8200808 出版年: 2019 (通讯作者) 45. Single-crystal GaN layer converted from beta-Ga2O3 films and its application for free-standing GaN/ CRYSTENGCOMM 卷: 21 期: 8 页: 1224-1230 出版年: 2019 44. Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted-molecular beam epitaxy/ JOURNAL OF CRYSTAL GROWTH 卷: 506 页: 30-35 出版年: 2019 (通讯作者) 43. Hybrid Cyan Nitride/Red Phosphors White Light-Emitting Diodes With Micro-Hole Structures/IEEE PHOTONICS JOURNAL 卷: 10 期: 5 文献号: 8201608 出版年: 2018 (通讯作者) 42. Influence of high Mg doping on the microstructural and optoelectrical properties of AlGaN alloys/ SUPERLATTICES AND MICROSTRUCTURES 卷: 119 页: 150-156 出版年: 2018 (通讯作者) 41. Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy/ APPLIED PHYSICS LETTERS 卷: 113 期: 7 文献号: 072107 出版年: 2018 (通讯作者) 40. Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes/ IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 29 期: 17 页: 1447-1450 出版年: 2017 39. Fabrication of AI GaN nanorods with different AI compositions for emission enhancement in UV range/ NANOTECHNOLOGY 卷: 28 期: 38 文献号: 385205 出版年: 2017 (通讯作者) 38. Manipulable and Hybridized, Ultralow-Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods/ ADVANCED FUNCTIONAL MATERIALS 卷: 27 期: 37 文献号: 1703198 出版年: 2017 (通讯作者,封面高亮论文) 37. Study of LED Thermal Resistance and TIM Evaluation Using LEDs With Built-in Sensor/ IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 29 期: 21 页: 1856-1859 出版年: 2017 36. Polarized Emission From InGaN/GaN Single Nanorod Light-Emitting Diode/ IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 28 期: 7 页: 721-724 出版年: 2016 (通讯作者) 35. Design and fabrication of UV band-pass filters based on SiO2/Si3N4 dielectric distributed bragg reflectors/ APPLIED SURFACE SCIENCE 卷: 364 页: 886-891 出版年: 2016 (通讯作者) 34. Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale/ NANOTECHNOLOGY 卷: 27 期: 1 文献号: 015301 出版年: 2016 (通讯作者,封面高亮论文) 33. High Color Rendering Index Hybrid III-Nitride/Nanocrystals White Light-Emitting Diodes/ ADVANCED FUNCTIONAL MATERIALS 卷: 26 期: 1 页: 36-43 出版年: 2016(通讯作者,封面高亮论文) 32. Reverse leakage current characteristics of GaN/InGaN multiple quantum-wells blue and green light-emitting diodes/ IEEE PHOTONICS JOURNAL 卷: 8 期: 5 文献号: 1601606 出版年: 2016 (通讯作者) 31. Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimization/ SCIENTIFIC REPORTS 卷: 6 文献号: 20218 出版年: 2016(通讯作者) 30. AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping/ IEEE PHOTONICS JOURNAL 卷: 8 期: 1 文献号: 1600207 出版年: 2016 29. Single nanowire green InGaN/GaN light emitting diodes/ NANOTECHNOLOGY 卷: 27 期: 43 文献号: 435205 出版年: 2016 (通讯作者) 28. Improvement of color conversion and efficiency droop in hybrid light-emitting diodes utilizing an efficient non-radiative resonant energy transfer/ APPLIED PHYSICS LETTERS 卷: 109 期: 14 文献号: 141105 出版年: 2016 (通讯作者) 27. In-Situ Measurement of Junction Temperature and Light Intensity of Light Emitting Diodes With an Internal Sensor Unit/IEEE ELECTRON DEVICE LETTERS 卷: 36 期: 10 页: 1082-1084 出版年: 2015 26. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface/JOURNAL OF APPLIED PHYSICS 卷: 117 期: 15 文献号: 153103 出版年: 2015 (通讯作者) 25. Optical polarization characteristics of c-plane InGaN/GaN asymmetric nanostructures/ JOURNAL OF APPLIED PHYSICS 卷: 118 期: 23 文献号: 233111 出版年: 2015 (通讯作者) 24. Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes/AIP ADVANCES 卷: 5 期: 8 文献号: 087151 出版年: 2015 (通讯作者) 23. Enhanced opto-electrical properties of graphene electrode InGaN/GaN LEDs with a NiOx inter-layer/SOLID-STATE ELECTRONICS 卷: 109 页: 47-51 出版年: 2015 (通讯作者) 22. Enhanced non-radiative energy transfer in hybrid III-nitride structures/APPLIED PHYSICS LETTERS 卷: 107 期: 12 文献号: 121108 出版年: 2015 2015以前 21. Effect of the band structure of InGaN/GaN quantum well on the surface plasmon enhanced light-emitting diodes/JOURNAL OF APPLIED PHYSICS 卷: 116 期: 1 文献号: 013101 出版年: 2014 (通讯作者) 20. Temporally and spatially resolved photoluminescence investigation of (11(2)over-bar2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates/APPLIED PHYSICS LETTERS 卷: 105 期: 26 文献号: 261103 出版年: 2014 (第一作者) 19. Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoimprint lithography/NANOTECHNOLOGY 卷: 24 期: 40 文献号: 405303 出版年: 2013 (通讯作者,封面高亮论文) 18. Exploitation of Polarization in Back-Illuminated AlGaN Avalanche Photodiodes/IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 25 期: 15 页: 1510-1513 出版年: 2013 (通讯作者) 17. Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures/APPLIED PHYSICS LETTERS 卷: 103 期: 10 文献号: 101108 出版年: 2013 (第一作者) 16. Hybrid III-Nitride/Organic Semiconductor Nanostructure with High Efficiency Nonradiative Energy Transfer for White Light Emitters/NANO LETTERS 卷: 13 期: 7 页: 3042-3047 出版年: 2013 15. Improvements in Microstructure and Leakage Current of High-In-Content InGaN p-i-n Structure by Annealing/IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 24 期: 17 页: 1478-1480 出版年: 2012 (通讯作者) 14. Magnetic and electrical properties of epsilon-Fe3N on c-plane GaN/JOURNAL OF PHYSICS D-APPLIED PHYSICS 卷: 45 期: 31 文献号: 315002 出版年: 2012 (通讯作者) 13. Composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors/APPLIED PHYSICS LETTERS 卷: 98 期: 26 文献号: 261916 出版年: 2011 (第一作者) 12. Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films/APPLIED PHYSICS A 卷: 99 期: 1 页: 139-143 出版年: 2010 (第一作者) 11. Polarization and temperature dependence of photoluminescence of m-plane GaN grown on gamma-LiAlO2 (100) substrate/APPLIED PHYSICS LETTERS 卷: 95 期: 6 文献号: 061905 出版年: 2009 (第一作者) 10. Improved Performances of InGaN Schottky Photodetectors by Inducing a Thin Insulator Layer and Mesa Process/IEEE ELECTRON DEVICE LETTERS 卷: 30 期: 6 页: 605-607 出版年: 2009 9. Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs/ IEEE JOURNAL OF QUANTUM ELECTRONICS 卷: 45 期: 5-6 页: 575-578 出版年: 2009 8. Al incorporation, structural and optical properties of AlxGa1-xN (0.13 <= x <= 0.8) alloys grown by MOCVD/ JOURNAL OF CRYSTAL GROWTH 卷: 310 期: 21 页: 4499-4502 出版年: 2008 (第一作者) 7. Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction/JOURNAL OF APPLIED PHYSICS 卷: 103 期: 2 文献号: 023504 出版年: 2008 (第一作者) 6. Anisotropic crystallographic properties, strain, and their effects on band structure of m-plane GaN on LiAlO2(100)/ APPLIED PHYSICS LETTERS 卷: 92 期: 26 文献号: 261906 出版年: 2008 (第一作者) 5. Two-step growth of m-plane GaN epilayer on LiAlO2 (100) by metal-organic chemical vapor deposition/JOURNAL OF CRYSTAL GROWTH 卷: 298 特刊: SI 页: 228-231 出版年: 2007 4. The template effects on AlN/Al0.3Ga0.7N distributed Bragg reflectors grown by MOCVD/JOURNAL OF CRYSTAL GROWTH 卷: 298 特刊: SI 页: 357-360 出版年: 2007 (第一作者) 3. The high mobility InN film grown by MOCVD with GaN buffer layer/JOURNAL OF CRYSTAL GROWTH 卷: 298 特刊: SI 页: 409-412 出版年: 2007 2. Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates/APPLIED PHYSICS LETTERS 卷: 91 期: 25 文献号: 253506 出版年: 2007 (第一作者) 1. Comment on Radiative and nonradiative recombination process in InN films grown by metal organic chemical vapor deposition / APPLIED PHYSICS LETTERS 卷: 87 期: 17 文献号: 176101 出版年: 2005 (第一作者) |