[1] B. Feng, K. Tang*, et al, "Electrical Properties of Boron-Doped Diamond MOSFETs with SiO2 As the Gate Dielectric", IEEE Trans. Electron Dev. (2026) accepted
[2] G. Y. Zhao, K. Tang*, et al, “Implementation of a nitrogen-vacancy micro-pillar array in diamond for a quantum imaging application with improved sensitivity”, Opt. Lett. 51, 953 (2026).
[3] G. Y. Zhao, K. Tang*, et al, "The regulation of the crystalline, fluorescence, and the spin properties of nitrogen-doped diamond films by controlling boron precursors", Diamond Relat. Mater. 169, 114212 (2026).
[4] W. K. Zhao, Y. Teng, K. Tang*, et al, “A Theoretical study on dopants substituted on the H-terminated surface regulating the threshold concentration of nitrogen for accelerating diamond growth”, Diamond Relat. Mater. 147, 111317 (2024).
[5] Y. Teng, W. K. Zhao, K. Tang*, et al, “Nitrogen adsorption induced surface kinetics changes of diamond growth by MPCVD”, Diamond Relat. Mater. 146, 111181 (2024).
