周玉刚

发布时间：2026-08-29浏览次数：274

  • Monolithic Integration of Mg-Free Trench-Gate MOSFETs and μLEDs. Guo, Y., Wang, G.,Zhou, Y.*,Chen, D.,Lu, H.,Liu, B.,Zhang, R.,Zheng, Y.,IEEE Electron Device Letters , Early Access, 2026, https://doi.org/0.1109/LED.2026.3724506

  • Design and Realization of GaN-Based Trench-Gate MOSFETs Based on Graded Al-Composition AlGaN Channel Layer. Guo, Y.,Liu, Z.,Wang, G.,Guo, H.,Zhou, Y.*,Chen, D.,Zhang, R.,Zheng, Y., IEEE Transactions on Electron Devices 73 (7), 4465-4469. 2026. https://doi.org/10.1109/TED.2026.3697706

  • High-Efficiency Deep Ultraviolet Light-Emitting Diode Based on Ag-Nanodot/Pd/Al Composite Electrode. Huang, L.,Cheng, F.,Li, L.,Zhou, Y.*,Zhang, R.,Zheng, Y., IEEE Transactions on Electron Devices 73 (6), 3903-3907.2026.  https://doi.org/10.1109/ted.2026.3684764

  • 3-D Stacked Full-Color μLED Displays with Monolithic Integrated Bismuth Ferrite-Based Color Filter. Chen, L.,Guo, Y.*,Huang, L.,Li, L.,Zhang, J.,Zhou, Y.*,Ren, F.,Lu, H.,Liu, B.,Zhang, R.,Zheng, Y., IEEE Electron Device Letters  47 (6), 1157-1160.2026. https://doi.org/10.1109/led.2026.3684510. (封面论文)

  • In Situ Junction Temperature Measurement and Thermal Resistance Extraction of AlGaN/GaN HEMTs Using Schottky Diode-Integrated Sensor. Wang, P.,Tang, F.,Wang, R.,Guo, H.,Peng, Y.,Guo, H.,Zhou, Y.*,Chen, D.,Zhang, R.,Zheng, Y., IEEE Electron Device Letters 47 (4), 804-807.2026. https://doi.org/10.1109/led.2026.3665725.

  • Micro-LED Microdisplays Driven by Carbon Nanotube Active-Matrix Backplanes. Li, Y.,Guo, Y.,Li, J.,Xi, M.,Bai, L.,Zhang, J.,Li, S.,Zhu, X.,He, Y.,He, B.,Chen, X.,Zhang, Y.,Gong, Y.,Yin, Z.,Kang, J.,Peng, L.-M.,Zhang, R.,Zhou, Y.*,Cao, Y.*,Liang, X.*, ACS Nano 19 (25), 22837-22848.2025.https://doi.org/10.1021/acsnano.5c00672.

  • Temperature-Dependent Carrier Dynamics in Micro-LEDs With Different Sidewall Passivation Layers. Wang, H.,Yin, J.,Hong Zhang, J.,Zhou, Y.*,Tao, T.,Zhou Liu, Y.,Feng Pan, D.,Liu, B.,Zhang, R.,Zheng, Y., IEEE Transactions on Electron Devices 72 (7), 3699-3706.2025. https://doi.org/10.1109/TED.2025.3574121

  • Significant Enhancement of Light Extraction in AlGaN-Based Deep-UV LED Through Ag-Nanodot/Ti/Al Reflective p-Contacts With an Ultra-Thin Ti Barrier. Cheng, F.,Pan, S.,Wang, H.,Guo, Y.,Jin, H.,Ren, F.,Zhou, Y.*,Lu, H.,Zhang, R.,Zheng, Y., IEEE Transactions on Electron Devices 72 (5), 2438-2443.2025. https://doi.org/10.1109/TED.2025.3556098

  • Quantitative Evaluation of Carrier Dynamics in Blue Micro-LEDs: The Impact of Size and Current Density on Recombination and Injection Efficiency. Wang, H.,Jia, X. T.,Guo, Y.,Liu, Z. X.,Zhou, Y. G.*,Tao, T.,Liu, B.,Zhang, R.,Zheng, Y. D., Acs Applied Electronic Materials 6 (11), 8134-8142.2024.https://doi.org/10.1021/acsaelm.4c01464.

  • Monolithic full-color micro-LED displays featuring three-dimensional chip bonding and quantum dot-based color conversion layer. Guo, Y.,Yu, J. C.,Huang, L.,Liu, Z. X.,Gai, Z. H.,Zhi, T.,Zhou, Y. G.*,Tao, T.,Liu, B.,Zhang, R.,Zheng, Y. D., Optics Express 32 (16), 27662-27669.2024. https://doi.org/10.1364/Oe.530687.

  • Ag nanodot/Mg/Al reflective Ohmic contacts simultaneously suitable for n-type and p-type GaN. Jin, N.,Zhou, Y.*,Guo, Y.,Pan, S.,Zhang, R.,Zheng, Y., Journal of Physics D: Applied Physics 56 (21), 215101.2023.https://doi.org/10.1088/1361-6463/acc598.

 (Pan S,  Chen KL,  Guo Y,  Liu ZX,  Zhou YG*,  Zhang R, Zheng YD )


  • Optimization of annealing conditions for Ag/p–GaN ohmic contacts.  Applied Physics A127 (11).2021.

    （Pan S,  Lu YM,  Liang ZB, Xu CJ, Pan DF, Zhou YG*, Zhang R, and Zheng YD）


  • High-Reflectivity Mg/Al Ohmic Contacts on n-GaN,IEEE Photonics Technology Letters, Vol.33, pp.347-349, Apr. 2021. doi:10.1109/lpt.2021.3063266

    （Guo Y, Pan S, Pan DF, Xu CJ, Zhou YG,* Zhang T, and Zheng YD）


  • Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K, Applied Sciences, vol. 10, p. 444, 2020.

    （Pan S, Sun CH, Zhou YG*, Chen W, Zhang R, and Zheng YD）


  • A simulation study on the enhancement of the efficiency of GaN-based blue light-emitting diodes at low current density for micro-LED applications, Materials Research Express, vol. 6, p. 105915, 2019.

    （Jia XT, Zhou YG*, Liu B, Lu H, Xie ZL, Zhang R, and Zheng YD）


  • The Effect of the Original Thickness of Ag in the Graphene-Ag Nanodots Transparent Conductive Layer on the Electrical and Optical Properties of GaN-Based UV-LEDs, IEEE Transactions on Electron Devices, pp. 1-6, 2018.
    （Chen W,     Zhou YG*, Yu XZ, Xie ZL, Zhang R, and Zheng YD）


  • Study of LED Thermal Resistance and TIM Evaluation Using LEDs With Built-in Sensor, IEEE Photonics Technology Letters, vol. 29, pp. 1856-1859, Nov 1 2017.
    （Wang XL,     Zhou YG*, Tian RB, Liu B, Xie ZL, Zhang R, Zheng YD）

  • In-Situ Measurement of Junction Temperature and Light Intensity of Light Emitting Diodes With an Internal Sensor Unit,IEEE ELECTRON DEVICE LETTERS, vol. 36, pp. 1082-1084, Oct. 2015
     (Li JM,     Zhou YG*, Qi YD, Miao ZL, Wang YM, Xiu XQ, Liu B, Zhang R, and Zheng YD)

  • Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth, PHYSICA STATUS SOLIDI C, Vol 2, No 7, pp.2663-2667, 2005
     (    Zhou YG, Chu RM, Liu J, Chen KJ, Lau KM)

  • Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition,JOURNAL OF ELECTRONIC MATERIALS，Vol. 34, No. 1, pp. 112-118, JAN 2005
    （    Zhou YG, Wang DL, Chu WM, Tang CW, Qi YD, Lu ZD, Chen KJ, Lau KM）

  • Investigation of the polarization-induced charges in modulation-doped AlxGa1-xN/GaN heterostructures through capacitance-voltage profiling and simulation,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1， Vol. 41, No. 4B, pp. 2531-2535, APR 2002
    （    Zhou YG, Shen B, Someya T, Yu HQ, Liu J, Zhou HM, Zhang R, Shi Y, Zheng YD, Arakawa Y）

  • Gas phase parasitic reactions and Al incorporation efficiency in light radiation heating, low-pressure metal-organic chemical vapor deposition of AlGaN,MATERIALS LETTERS, vol. 45, no.6, pp 331-335, Oct 2000
     (    Zhou YG, Zhang R, Li WP, Shen B, Chen P, Chen ZZ, Gu SL, Shi Y, Zheng YD and Huang ZC)

  • High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment,IEEE ELECTRON DEVICE LETTERS, Vol. 26, No. 7, pp. 435-437, Jul 2005  
     (Cai Y,     Zhou YG, Chen KJ, Lau KM)




    近期授权发明专利：

  • CN202110521392.6，具有同材质高反射p、n欧姆接触的倒装LED芯片及制法，周玉刚、郭焱、金楠、梁志斌、潘赛、许朝军、张荣

    CN202110275172.X，包含高反射 n-GaN 欧姆接触的倒装 LED 芯片及其制作方法，周玉刚、郭焱、许朝军、潘赛、张荣

    CN202010362919.0，高发光效率的深紫外发光二极管芯片及其制作方法，周玉刚、陆佑铭、许朝军、王安生、张荣

    CN202110034154.2，流体组装的微米级器件模组及其制造方法，周玉刚、贾先韬、许朝军、张荣


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    CN201710033551.1，一种高密度封装及其制造方法，田仁宝（学生）、周玉刚、张荣
    CN201410004973.2, 一种集成传感单元的LED器件及其制造方法, 周玉刚、张荣

    CN201510012923.3, 一种改善电流扩展的半导体器件, 周玉刚、修向前、谢自力、陈鹏、刘斌、张荣

    CN201510219302.2, 紫外半导体发光器件及其制造方法,周玉刚、余显正、张荣

    CN201510308515.2, 一种集成石墨烯温度传感的LED器件及其制造方法, 周玉刚、李家明、张荣

    CN201010190052.1, 一种使用交流电的发光器件及其制造方法, 周玉刚等；【PCT申请, 美国，欧盟，日本专利号如下：WO2011147063A1 - US2011285284A1 - EP2390918A2 - JP2011249755A】