Selected publications
2025
2.Yuyin Li, Peng Chen*, et.al., Cavity Plasmon: Enhanced Luminescence Effect on InGaN Light mitting Diodes, arXiv:2501:04713 (2025).
1. Ziwen Yan, Peng Chen*, et.al. Electromagnetic Nanocoils Based on InGaN Nanorings, Nanomaterials, 15(3)：245-249 (2025).
2018 - 2024 (17)
17. Yuyin Li, Jing Zhou, Peng Chen *, et.al., GaN microdisks with a single porous optical confinement layer for whispering gallery mode lasing, Appl. Phys. Lett. 125, 093504 (2024)
16. Ru Xu, Peng Chen *, et.al., A lateral AlGaN/GaN Schottky barrieriode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using ouble-barrier anode structure, Chip, 3, 100079 (2024)
15. Yuyin Li, Peng Chen*, Xianfei Zhang, et.al., The Study on the Lasing Modes Modulated by the Dislocation
Distribution in the GaN-Based Microrod Cavities, Nanomaterials, 13, 2228 (2023).
14. Ru Xu , Peng Chen*, Jing Zhou, et.al., High Power Figure-of-Merit, 10.6-kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-μm Anode-to-Cathode Spacing, Small 2022, 2107301, (2022). -- The paper for the back cover.
13. Jing Zhou, Peng Chen*, Zili Xie, et.al., The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge Cavity, Crystals, 12, 348, (2022).
12. Yimeng Li, Peng Chen*, Xiufang Chen*, et.al., Gate-Controlled NiO/Graphene/4H-SiC Double Schottky Barrier Heterojunction Based on a Metal-Oxide-Semiconductor Structure for Dual-Mode and Wide Range Ultraviolet Detection, ACS APPLIED ELECTRONIC MATERIALS，4 (4) , pp.1807 (2022)
11. Ru Xu , Peng Chen*, Menghan Liu, et.al., 3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure，IEEE Electron Device Letters, Vol. 2, 208，(2021).
10. Ru Xu , Peng Chen*, Menghan Liu, et.al., 2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure， Solid-State Electronics, 175, 107953, (2021).
9. Yimeng Li, Peng Chen*, Xiufang Chen*, et.al., High-Responsivity Graphene/4H-SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields, Advanced Optical Materials,2000559, (2020).
8. Tao Tao, Ting Zhi, Bin Liu*, Peng Chen*, et.al., Electron-Beam-Driven III-Nitride Plasmonic Nanolasers in the Deep-UV and Visible Region, Small, 16, 1906205, (2020).
7. Ru Xu , Peng Chen*, Menghan Liu, et.al., 1.4-kV Quasi-Vertical GaN Schottky Barrier Diode with Reverse p-n Junction Termination, IEEE Journal of the Electron Devices Society, Vol. 8, 316 (2020).
6. Menghan Liu , Peng Chen*, Jing Zhou, et.al., Realization of regular resonance mode in GaN-based polygonal microdisks on Si,J. Appl. Phys. 127, 113102 (2020).
5. Meng-Han Liu(刘梦涵), Peng Chen(陈鹏)*, Zi-Li Xie(谢自力), et.al., Approach to Single-Mode Dominated Resonant Emission in GaN-Based Square Microdisks on Si, Chin. Phys. Lett. Vol. 37, No. 5, 054204 (2020).
4. Jing Zhou, Peng Chen*, Meng-Han Liu, et.al., Study on the self-absorption of InGaN quantum wells at high photon density, Applied Optics, Vol. 59, No. 16, 4790 (2020).
3. Ningze Zhuo, Na Zhang, Peng Chen* and Haibo Wang*, Enhancement of efficiency and CCT uniformity for red phosphor thin films, red LEDs and laminated white LEDs based on near-ultraviolet LEDs using MgO nanoparticles, RSC Advances，9, 28291, (2019).
2. Ningze Zhuo, Na Zhang, Teng Jiang, Peng Chen* and Haibo Wang*, Effect of particle sizes and mass ratios of a phosphor on light color performance of a green phosphor thin film and a laminated white lightemitting diode, RSC Advances， 9, 27424, (2019).
1. Jiang, Fulong; Liu, Yaying; Chen, Peng*; et al.,The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurementctions，IEEE PHOTONICS JOURNAL，10， 8200509，(2018).
2008 - 2017 (1)
1. Yang, G. F.; Chen, P.*; Wang, M. Y.; et al., Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Volume: 45 Pages: 61-65 Published: AUG 2012
1998 - 2007 (14)
1. P. Chen, A. Chen，S. J. Chua, and J. N. Tan，Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures， ADVANCED MATERIALS, Vol 19(13), 1707-1710, 2007
2. P. Chen, S. J. Chua, and J. N. Tan, High-density InGaN nanodots grown on pretreated GaN surfaces,APPLIED PHYSICS LETTERS, 89, 023114, 2006
3. P. Chen, S. J. Chua, Y. D. Wang, M. S. Sander, and C. G. Fonstad, InGaN Nanorings and Nanodots by Selective Area Epitaxy, APPLIED PHYSICS LETTERS, 87, 143111, 2005
4. H.W.Choi, K.N.Hui, P.Lai, P.Chen, X.H.Zhang, S.Tripathy, J.H.Teng, and S.J.Chua, Lasing in GaN microdisks pivoted on Si, APPLIED PHYSICS LETTERS, 89, 211101, 2006
5. P Chen*, S.J.Chua, W.D.Wang, D.Z.Chi, Z.L.Miao, Y.D.Zheng, Influence of The Polarization on Interfacial Properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN Heterojunction Metal-Insulator-Semiconductor Structures, JOURNAL OF APPLIED PHYSICS, 94 (7): 4702-4704, 2003
6. P. Chen*, W. Wang, and S. J. Chua and Y. D. Zheng, High-frequency capacitance–voltage measurement of plasma-enhanced chemical-vapor-deposition-grown SiO2 on GaN metal-insulatorsemiconductor structures, APPLIED PHYSICS LETTERS VOLUME 79, 3530 2001
7. P. Chen*, R. Zhang, Z.M. Zhao, D.J. Xi, B. Shen, Z.Z. Chen, Y.G. Zhou, S.Y. Xie, W.F. Lu, Y.D. Zheng, Growth of high quality GaN layers with AlN buffer on Si(111) substrates, Journal of Crystal Growth, 225, 150–154, 2001
8. Chen, P*; Shen, B; Zhu, JM; et al. Microstructures of GaN buffer layers grown on Si(111) using rapic thermal process low-pressure metalorganic chemical vapor deposition, Chinese Physics Letters, Volume: 17, Issue:3, Pages:224-226 2000.
9. P. Chen*, S.Y. Xie, Z.Z. Chen, et. al. Deposition and crystallization of amorphous GaN buffer layers on Si(111) substrates, Journal of Crystal Growth, 213, 27-32, 2000
10. Chen, P*; Zhang, R; Xu, XF; et al. The oxidation of gallium nitride epilayers in dry oxygen, Applied Physics A-Materials Science & Processing, Volume: 71, Issue: , 2Pages: 191-194, 2000.
11. Chen, P*; Shen, B; Zhang, R; et al. Two-step growth of GaN quantum dots with metalorganic chemical vapor deposition, Materials Research Society Symposium Proceedings, Volume: , 512 Pages: 65-68, Published: 1998.
12. Chen Peng, Chua Soo-Jin, Miao Zhonglin and Tripathy Sudhiranjan, “Method and Structure for Fabricating III-V Nitride Layers on Silicon Substrates” Patent application filed on 2 February 2005 in US patent office, granted in 2011 (US 60/648,710; 11/344,472; US7,910,937 B2 ).
13. Chua Soo-Jin, Chen Peng and Takasuka, Eiryo, “Group-III Nitride White Light Emitting Diode”, PCT application filed in Singapore in 2005, granted in 2008 (PCT/SG2005/000099), filed on 10 Dec, 2009 in US patent office (US 2009/0302308 A1 ).
14.Chua Soo-Jin, Chen Peng and Wang Yadong, “Nanostructures and Method of Making the Same”, PCT application filed on 31-Aug-2004 in Singapore, granted in 2007 (PCT/SG2004/000274, WO 2006/025793A1, 130414), published on 1-Mar-06 in Taiwan (TW200607753).
