(1) Artificial synapse arrays based on SiOx/TiOx memristive crossbar with high uniformity for neuromorphic computing, Kangming Leng; Xinyue Yu; Zhongyuan Ma*; Wei Li; Jun Xu; Ling Xu; Kun-Ji Chen, Applied Physics Letters, 2022, 120: 043101
(2) Artificial neurons and synapse based on Al/a-SiNxOy:H/P+-Si device with tunable resistive switching from threshold to memory, Kangmin Leng; Xu Zhu; Zhongyuan Ma*; Xinyue Yu; Jun Xu; Ling Xu; Wei Li; Kunji Chen Nanomaterials, 2022, 12: 311
(3) Artificial synapse consisted of TiSbTe/a-SiC0.11:H memristor with ultra-high uniformity for neuromorphic computing, Liangliang Chen; Zhongyuan Ma; *, Kangmin Leng; Tong Chen; Hongsheng Hu; Yang Yang; Wei Li; Jun Xu; Ling Xu and Kunji ChenNanomaterials, 2022, 12: 2110
(4) 3D NAND flash memory based on double-Layer NC-Si floating gate with high density of multilevel storage, Xinyue Yu; Zhongyuan Ma;* Zixiao Shen; Wei Li; Kunji Chen; Jun Xu and Ling Xu, Nanomaterials, 2022, 12: 2459
(5) a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths, Jiang,XF; Ma,ZY*; Xu,J; Chen, KJ; Xu,L; Li,W; Huang,XF; Feng,D, Scientific Reports, 2015, 5: 15762
(6) Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers, Jiang,XF; Ma,ZY*; Yang,HF; Yu,J; Wang,W; Zhang, WP; Li,W; Xu,J; Xu,L; Chen, KJ, Journal of Applied Physics, 2014, 116: 123705
