Ge M, Ruzzarin M, Chen DJ*, Lu H, Zhang R, Zheng YD, Gate reliability of p-GaN gate AlGaN/GaN high electron mobility transistors, IEEE Electron Device Letters 40: 397 (2019).
Shao ZG, Chen DJ*, Lu H, R Zhang R, Zheng YD, High-gain AlGaN solar-blind avalanche photodiodes, IEEE Electron Device Letters 35: 372 (2014).
Shao ZG, Chen DJ*, Liu YL, Lu H, R Zhang R, Zheng YD, Significant performance improvement in AlGaN solar-blind avalanche photodiodes by exploiting built-in polarization electric field, IEEE Journal of Selected Topics in Quantum Electronics 20: 3803306 (2014).
Jia, XL, Chen DJ*, Lu H, Zhang R, Zheng YD, Ultrasensitive detection of phosphate using ion-imprinted polymer functionalized AlInN/GaN high electron mobility transistors, IEEE Electron Device Letters 37: 913 (2016).
Wang J, You HF, Guo H, Chen DJ*, Liu B, Lu H, Zhang R, Zheng YD, Do all screw dislocations cause leakage in GaN-based devices, Applied Physics Letters 116:062104 (2020).
Cai Q; Luo WK; Li,Q; Li M; Chen, DJ*; Lu, H; Zhang, R; Zheng, YD, AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure. Applied Physics Letters, 113: 123503 (2018).
Wang J; Yang GF; Xue JJ; Lei JM; Chen DJ*; Lu H; Zhang R; Zheng YD, A reusable and high sensitivity nitrogen dioxide sensor based on monolayer SnSe. IEEE Electron Device Letters 39: 599 (2018).
Wang J, Guo H, Chen DJ*, Liu B, Lu H, Zhang R, Zheng YD, epsilon-GaO: A promising candidate for high electron mobility transitors, IEEE Electron Device Letters 41: 1052 (2020).
Huang Y，Chen DJ*, Lu H, Zhang R, Zheng YD, Li L, Chen C, Chen TS, Identifying Interface States in AlInN/GaN Heterostructure by Photocurrent Method，IEEE Electron Device Letters 32:1071 (2011).
Qiao G, Cai Q, Ma TC, Wang J, Chen XH, Xu Y, Shao ZG, Ye JD, Chen DJ*, Nanoplasmonically Enhanced High-Performance Metastable Phase α-Ga2O3 Solar-Blind Photodetectors. ACS Applied Materials & Interfaces 11: 40283 (2019).
