ØBingjun Li, Alexander S Chang, Lincoln J Lauhon, and Jung Han, Chapter 12 - In-situ TBCl etching and selective-area growth and doping of GaN, in Gallium Nitride and Related Materials - Device Processing and Materials Characterization for Power Electronics Applications, Springer Nature (2025).（专著）
ØBingjun Li, Chenziyi Mi, Jin-Ho Kang, Hao Li, Rami Elafandy, Wei-Chih Lai, Jinn-Kong Sheu, and Jung Han, Photonic engineering of InP towards homoepitaxial short-wavelength infrared VCSELs, Optica 11 (1), 113 (2024).
ØBingjun Li, Sizhen Wang, Mohsen Nami, Andrew M. Armstrong, and Jung Han, Etched-and-regrown GaN P-N diodes with low-defect interfaces prepared by in-situ TBCl etching, ACS applied materials & interfaces, 13 (44), 53220-53226 (2021).
ØJin-Ho Kang*, Bingjun Li*, Tianshuo Zhao, Muhammad Ali Johar, Chien-Chung Lin, Yen-Hsiang Fang, Wei-Hung Kuo, Kai-Ling Liang, Shu Hu, Sang-Wan Ryu, and Jung Han, RGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots, ACS Appl. Mater. Interfaces, 12 (27), 30890-30895 (2020). (*共同一作)
ØBingjun Li, Sizhen Wang, Mohsen Nami, and Jung Han, A study of in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl), J. Cryst. Growth, 534, 125492 (2020).
ØBingjun Li, Mohsen Nami, Sizhen Wang, and Jung Han, In-situ and selective area etching of GaN by Tertiarybutylchloride (TBCl), Appl. Phys. Lett. 115, 162101 (2019).（编辑高亮推介）
ØBingjun Li, Chenziyi Mi, Jin-Ho Kang, Rami Elafandy, and Jung Han, SWIR VCSELs enabled by homoepitaxial nanoporous-InP DBRs, Conference on Lasers and Electro-Optics (CLEO) (2024).（光学顶会）
ØBingjun Li, and Jung Han, Selectrive area growth, etching, and doping of GaN by MOCVD for power electronics, ECS Transactions, 112 (2), 57 (2023).
ØBingjun Li, Chenziyi Mi, Rami Elafandy, Jin-Ho Kang, and Jung Han, Applications of electrochemistry toward blue/green and SWIR-wavelength VCSELs, ECS Transactions, 112 (2), 3 (2023).
ØBingjun Li, Sizhen Wang, Alexander S. Chang, Lincoln J. Lauhon, Yafei Liu, Balaji Raghothamachar, Michael Dudley, and Jung Han, Selective area etching and doping of GaN for high-power applications, ECS Transactions, 104 (7) (2021).
ØRomualdo A Ferreyra, Bingjun Li, Sizhen Wang, and Jung Han, Selective area doping of GaN towards high-power applications, Journal of Physics D: Applied Physics, 56, 373001 (2023).
ØAlexander S Chang, Bingjun Li, Sizhen Wang, Sam Frisone, Rachel S Goldman, Jung Han, and Lincoln J Lauhon, Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN PN junctions for efficient power devices,Nano Energy, 102, 107689 (2022).
ØAlexander S Chang, Bingjun Li, Sizhen Wang, Mohsen Nami, Paul JM Smeets, Jung Han, and Lincoln J Lauhon, Selective Area Regrowth Produces Nonuniform Mg Doping Profiles in Nonplanar GaN p–n Junctions, ACS Appl. Electron. Mater., 3 (2), 704-710 (2021).
ØHouqiang Fu, Kai Fu, Chen Yang, Hanxiao Liu, Kevin A Hatch, Prudhvi Peri, Dinusha Herath Mudiyanselage, Bingjun Li, Tae-Hyeon Kim, Shanthan R Alugubelli, Po-Yi Su, Daniel C Messina, Xuguang Deng, Chi-Yin Cheng, Reza Vatan Meidanshahi, Xuanqi Huang, Hong Chen, Tsung-Han Yang, Jingan Zhou, Andrew M Armstrong, Andrew A Allerman, T Yu Edward, Jung Han, Stephen M Goodnick, David J Smith, Robert J Nemanich, Fernando A Ponce, and Yuji Zhao, Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress, Materials Today, 49, 296-323 (2021).
